| 摘要 |
According to one embodiment, a semiconductor storage device includes a stripe, a sense amplifier, a global signal line, and a controller. Blocks are in the stripe. The blocks are formed in a first direction. Each of blocks is made a read unit of data and includes a memory cell capable of holding the data provided along a row and a column. The sense amplifier is provided just under each of the blocks, and reads the data. The global signal line is formed so as to penetrate through the stripe in the first direction, and transfers the data read from the block to the sense amplifier. The controller controls a value of a reference current applied to the sense amplifier according to positional relationship between each area in which the sense amplifier is arranged and the block, which is made a read target of the data, out of the blocks. |
