发明名称 PLASMA CVD APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus for depositing an amorphous carbon film on a substrate, in which the adhesion of a material that contains carbon to a positive electrode is suppressed. <P>SOLUTION: The plasma CVD apparatus 100 includes: a reaction chamber 10; a positive electrode 20 and a negative electrode 30 disposed in the reaction chamber 10; a gas supply unit 1 (a first gas supply pipe 40) for supplying a first gas that contains carbon between the positive electrode 20 and the negative electrode 30; and a second gas supply unit 2 (a second gas supply pipe 42, a gas passage 22, and a metallic porous body 24) for supplying, during the supply of the first gas, the second gas that does not contain carbon between the positive electrode 20 and the negative electrode 30. The second gas supply unit 2 is set up to supply the second gas in a direction to face the negative electrode 30 from the positive electrode 20. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013104093(A) 申请公布日期 2013.05.30
申请号 JP20110248450 申请日期 2011.11.14
申请人 TOYOTA MOTOR CORP 发明人 WATANABE KAZUHIRO
分类号 C23C16/455;C23C16/503 主分类号 C23C16/455
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