| 摘要 |
A thin film transistor array substrate may include a thin film transistor including an active layer, a gate electrode, source and drain electrodes, a first insulation layer arranged between the active layer and the gate electrode, and a second insulation layer arranged between the gate electrode and the source and drain electrodes, a pixel electrode arranged on the first insulation layer and comprising the same material as the gate electrode, a capacitor comprising a first electrode arranged on the same layer as the active layer and a second electrode arranged on the same layer as the gate electrode, a pad electrode arranged on the second insulation layer and comprising the same material as the source and drain electrodes, a protection layer formed on the pad electrode, and a third insulation layer formed on the protection layer and exposing the pixel electrode. |
