| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which can support inhibition of light absorption at a contact part and achieve excellent ohmic contact between an electrode and a semiconductor layer at the same time, and which can improve a radiant power output with less increase in a forward voltage and emits UV light; and provide a manufacturing method of the semiconductor light-emitting element. <P>SOLUTION: A semiconductor light-emitting element 100 of an embodiment comprises: a semiconductor laminate 106 including a first conductivity-type semiconductor layer 105, a luminous layer 104 and a second conductivity-type semiconductor layer 103 in this order; a contact part 109 in which a contact layer 107 and an ohmic electrode layer 108 are laminated on the first conductivity-type semiconductor layer 105; a first electrode 113 contacting the ohmic electrode layer 108 and electrically connected to the first conductivity-type semiconductor layer 105; and a second electrode 112 electrically connected to the second conductivity-type semiconductor layer 103. The contact part 109 includes a plurality of island-shaped openings 111 on which the first conductivity-type semiconductor layer 105 is exposed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
