发明名称 MANUFACTURING METHOD OF PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION ELEMENT, AND PHOTOELECTRIC CONVERSION ELEMENT MODULE
摘要 <P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a photoelectric conversion element, capable of manufacturing at low cost a large area photoelectric conversion element using a nitride semiconductor, and to provide a photoelectric conversion element and a photoelectric conversion element module. <P>SOLUTION: The manufacturing method of a photoelectric conversion element, comprising processes of: forming a first buffer layer 2, a second buffer layer 600, an i-type nitride semiconductor layer 500, and an n-type nitride semiconductor layer 400 on a first substrate 1; and removing the first substrate 1 using a cutting tool 4, the photoelectric conversion element, and the photoelectric conversion element module are provided. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013105869(A) 申请公布日期 2013.05.30
申请号 JP20110248311 申请日期 2011.11.14
申请人 SHARP CORP 发明人 SANO YUICHI;HAYASHI TAKASHI;HASHIYAMA TAKAFUMI
分类号 H01L31/04 主分类号 H01L31/04
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