发明名称 VOLUME CONTROL METHOD AND VOLUME CONTROL DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT, CONTROL PROGRAM, AND READABLE STORAGE MEDIUM
摘要 <P>PROBLEM TO BE SOLVED: To stabilize a plating rate and a plated film thickness by suppressing changes in the concentration of a plating solution, due to water evaporation from the plating solution, and in the states of various components. <P>SOLUTION: A volume control device includes: an ultrasonic humidifier 9 as a vapor pressure control means for controlling the vapor pressure of a plating treatment liquid in a gas above the surface of the treatment liquid in a plating treatment tank 2; and an electrical equipment control unit 11 for adjusting the amount of the treatment liquid by controlling the ultrasonic humidifier 9 as the vapor pressure control means so that the surface position of the plating treatment liquid becomes a predetermined position. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013104112(A) 申请公布日期 2013.05.30
申请号 JP20110249977 申请日期 2011.11.15
申请人 SHARP CORP 发明人 KAWASAKI MUTSUO;AGO FUJIO
分类号 C23C18/31;C23C18/16;H01L21/288 主分类号 C23C18/31
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