发明名称 |
VOLUME CONTROL METHOD AND VOLUME CONTROL DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT, CONTROL PROGRAM, AND READABLE STORAGE MEDIUM |
摘要 |
<P>PROBLEM TO BE SOLVED: To stabilize a plating rate and a plated film thickness by suppressing changes in the concentration of a plating solution, due to water evaporation from the plating solution, and in the states of various components. <P>SOLUTION: A volume control device includes: an ultrasonic humidifier 9 as a vapor pressure control means for controlling the vapor pressure of a plating treatment liquid in a gas above the surface of the treatment liquid in a plating treatment tank 2; and an electrical equipment control unit 11 for adjusting the amount of the treatment liquid by controlling the ultrasonic humidifier 9 as the vapor pressure control means so that the surface position of the plating treatment liquid becomes a predetermined position. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013104112(A) |
申请公布日期 |
2013.05.30 |
申请号 |
JP20110249977 |
申请日期 |
2011.11.15 |
申请人 |
SHARP CORP |
发明人 |
KAWASAKI MUTSUO;AGO FUJIO |
分类号 |
C23C18/31;C23C18/16;H01L21/288 |
主分类号 |
C23C18/31 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|