发明名称 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
摘要 There is provided a method for producing a semiconductor device, which is capable of suppressing voids during mounting of a semiconductor element to produce a semiconductor device with high reliability. A method for producing a semiconductor device of the present invention includes the steps of: providing a sealing sheet having a base material and an under-fill material laminated on the base material; bonding the sealing sheet to a surface of a semiconductor wafer on which a connection member is formed; dicing the semiconductor wafer to form a semiconductor element with the under-fill material; retaining the semiconductor element with the under-fill material at 100 to 200° C. for 1 second or more; and electrically connecting the semiconductor element and the adherend through the connection member while filling a space between the adherend and the semiconductor element with the under-fill material.
申请公布号 US2013137219(A1) 申请公布日期 2013.05.30
申请号 US201213686852 申请日期 2012.11.27
申请人 NITTO DENKO CORPORATION;NITTO DENKO CORPORATION 发明人 SENZAI HIROYUKI;TAKAMOTO NAOHIDE;MORITA KOSUKE
分类号 H01L21/78 主分类号 H01L21/78
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