发明名称 |
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE |
摘要 |
There is provided a method for producing a semiconductor device, which is capable of suppressing voids during mounting of a semiconductor element to produce a semiconductor device with high reliability. A method for producing a semiconductor device of the present invention includes the steps of: providing a sealing sheet having a base material and an under-fill material laminated on the base material; bonding the sealing sheet to a surface of a semiconductor wafer on which a connection member is formed; dicing the semiconductor wafer to form a semiconductor element with the under-fill material; retaining the semiconductor element with the under-fill material at 100 to 200° C. for 1 second or more; and electrically connecting the semiconductor element and the adherend through the connection member while filling a space between the adherend and the semiconductor element with the under-fill material.
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申请公布号 |
US2013137219(A1) |
申请公布日期 |
2013.05.30 |
申请号 |
US201213686852 |
申请日期 |
2012.11.27 |
申请人 |
NITTO DENKO CORPORATION;NITTO DENKO CORPORATION |
发明人 |
SENZAI HIROYUKI;TAKAMOTO NAOHIDE;MORITA KOSUKE |
分类号 |
H01L21/78 |
主分类号 |
H01L21/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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