| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film transistor device which achieves high quality by inhibiting formation of an organic semiconductor layer in an unintended region in formation of the organic semiconductor layer, and by inhibiting mixture of inks between neighboring openings; provide a manufacturing method of the thin film transistor device; and provide an organic EL display element and an organic EL display device. <P>SOLUTION: A thin film transistor device comprises: a barrier 1016 in which three openings 1016a, 1016b, 1016c are opened; and source electrodes 1014a, 1014b and drain electrodes 1014c, 1014d which are exposed on respective bottoms of the openings 1016b, 1016c, and which function as channel parts, respectively. Lateral faces 1016d, 1016e among lateral faces facing the opening 1016b are relatively steeper inclined planes compared with a lateral face 1016i. A lateral face 1016f among lateral faces facing the opening 1016c is a relatively steeper inclined plane compared with a lateral face 1016j. <P>COPYRIGHT: (C)2013,JPO&INPIT |
