发明名称 STRESSED TRANSISTOR WITH IMPROVED METASTABILITY
摘要 An embedded, strained epitaxial semiconductor material, i.e., an embedded stressor element, is formed at the footprint of at least one pre-fabricated field effect transistor that includes at least a patterned gate stack, a source region and a drain region. As a result, the metastability of the embedded, strained epitaxial semiconductor material is preserved and implant and anneal based relaxation mechanisms are avoided since the implants and anneals are performed prior to forming the embedded, strained epitaxial semiconductor material.
申请公布号 US2013134444(A1) 申请公布日期 2013.05.30
申请号 US201313751778 申请日期 2013.01.28
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ADAM THOMAS N.;BEDELL STEPHEN W.;DUBE ABHISHEK;HARLEY ERIC C. T.;HOLT JUDSON R.;REZNICEK ALEXANDER;SADANA DEVENDRA K.;SCHEPIS DOMINIC J.;STOKER MATTHEW W.;TABAKMAN KEITH H.
分类号 H01L29/78 主分类号 H01L29/78
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