SEMICONDUCTOR DEVICE STRUCTURES COMPRISING CRYSTALLINE Pr1-xCaxMnO3 (PCMO) MATERIAL AND METHODS OF FORMING CRYSTALLINE PCMO MATERIAL

摘要

A method of forming a crystalline Pr1-xCaxMnO3 (PCMO) material includes forming an amorphous PCMO material, crystallizing the amorphous PCMO material, and removing a portion of the crystalline PCMO material. A semiconductor structure including the crystalline PCMO material is also disclosed where the crystalline PCMO material has a thickness of less than about 50 nm. A method of forming a semiconductor device structure is also disclosed.