发明名称 POWER TRANSISTOR GATE DRIVER
摘要 The present invention relates to a gate driver for a power transistor comprising a first charging path operatively connected between a first voltage supply and a gate terminal of the power transistor for charging the gate terminal to a first gate voltage. A second charging path is connectable between the gate terminal of the power transistor and a second supply voltage to charge the gate terminal from the first gate voltage to a second gate voltage larger or higher than the first gate voltage. A voltage of the second voltage supply is higher than a voltage of the first voltage supply.
申请公布号 WO2012171938(A3) 申请公布日期 2013.05.30
申请号 WO2012EP61161 申请日期 2012.06.13
申请人 MERUS AUDIO APS;HOEYERBY, MIKKEL;JAKOBSEN, JOERGEN KRAGH 发明人 HOEYERBY, MIKKEL;JAKOBSEN, JOERGEN KRAGH
分类号 H03F3/217;H02M1/08;H03K17/06;H03K17/687 主分类号 H03F3/217
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