发明名称 Power Semiconductor Device
摘要 The purpose of the present invention is to provide a power semiconductor device which has a light weight, high heat dissipation efficiency, and high rigidity. The power semiconductor device including a base 1, semiconductor circuits 2 which are arranged on the base 1, and a cooling fin 3 which cools each of the semiconductor circuits 2, in which one or more protruding portions 1a, 1b are formed on the base 1, widths of the protruding portions 1a, 1b in a direction parallel to the base 1 surface being longer than a thickness of the base 1, thereby providing power semiconductor devices 100, 200, 300, 400 which have a light weight, high heat dissipation efficiency, and high rigidity.
申请公布号 US2013135824(A1) 申请公布日期 2013.05.30
申请号 US201213689299 申请日期 2012.11.29
申请人 HITACHI, LTD.;HITACHI, LTD. 发明人 HARUBEPPU YU;KUSHIMA TAKAYUKI;NEMOTO YASUHIRO;HORIUCHI KEISUKE;TANIE HISASHI
分类号 H01L23/34;H01L23/42 主分类号 H01L23/34
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