| 摘要 |
The present invention is provided with a semiconductor-type light source 2 and a reflector 3. The reflector 3 has reflection surfaces 31U to 31D. The semiconductor-type light source 2 is disposed at or near a reference focal point F of the reflection surfaces 31U to 31D. The reflection surfaces 31U to 31D are divided into upper and lower sides in a direction in which light is to be radiated from the semiconductor-type light source 2, with respect to an X axis passing through a center O of the semiconductor light source 2 or its proximity. Among the upper and lower reflection surfaces, on the upper side, convergent scattering reflection surfaces 31U to 34U are disposed, and on the lower side, divergent scattering reflection surfaces 31D to 34D are disposed. As a result, the present invention is capable of forming an approximately ideal light distribution pattern HPA for high beam.
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