| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve reliability and an operation property by preventing currents from being reduced when a memory cell is turned on. CONSTITUTION: A word line(WL) is formed on a semiconductor substrate(101) with a well(103) of a first impurity concentration. The word line includes a laminate structure of a tunnel insulation layer(107), a floating gate(109), a dielectric layer(111), and a control gate(113). A source and a drain are formed on both sides of the word line on the semiconductor substrate. A junction region is formed in the well on both sides of a cell gate. An impurity injection layer(105) is located between the junction regions with a shallow depth.</p> |
