| 摘要 |
<p>This first semiconductor device is provided with a semiconductor substrate comprising a cell region and a non-cell region provided to the periphery of the cell region. The cell region is provided with: a first semiconductor region of a first electroconductivity type; a second semiconductor region of a second electroconductivity type formed on a surface of the semiconductor substrate on the side of the surface of the first semiconductor region; a trench-type insulated gate that is formed to a depth penetrating through the second semiconductor region from the surface side of the semiconductor substrate and coming into contact with the first semiconductor region, the longitudinal direction stretching in a first direction; and a first trench electroconductor, at least a part of which is formed in the cell region between the insulated gate and the non-cell region, and in which a trench is filled with an electroconductor covered with an insulating film. The first trench electroconductor is provided with a first portion that stretches in the first direction and a second portion that projects out in a second direction orthogonal to the first direction and oriented from the cell region side toward the non-cell region; at least a part of the bottom of the second portion reaches a position deeper than the boundary between the first semiconductor region and the second semiconductor region.</p> |
