| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor light-emitting element capable of dividing in high accuracy a nitride semiconductor light-emitting element using a nitride semiconductor substrate having a semipolar surface such as (202-1) and (202-1-). <P>SOLUTION: The manufacturing method of a nitride semiconductor light-emitting element comprises a process of forming a striped groove 13 so as to extend in a predetermined division position Xa direction of a major growth plane 1a of a nitride semiconductor substrate 1 having a major growth plane in a (202-1) surface, not buried in a nitride semiconductor layer 2, and making the nitride semiconductor layer 2 grow only on one inner surface, before a nitride semiconductor layer formation process. <P>COPYRIGHT: (C)2013,JPO&INPIT |
