| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing a tunnel off-leak current of a tunnel transistor. <P>SOLUTION: According to one embodiment, a semiconductor device comprises a substrate and a gate electrode formed on the substrate via a gate insulating film. The semiconductor device further comprises a source region of a first conductivity type and a drain region of a second conductivity type being a conductivity type opposite to the first conductivity type both of which are formed so as to interpose the gate electrode therebetween in the substrate. In addition, the gate electrode has a first region of the first conductivity type formed at a source region side in the gate electrode and a second region which is formed at a drain region side in the gate electrode and has a smaller value obtained by subtracting an impurity concentration of the second conductivity type from an impurity concentration of the first conductivity type in comparison with that of the first region. <P>COPYRIGHT: (C)2013,JPO&INPIT |
