发明名称 UPRIGHT TYPE DEPOSITION APPARATUS
摘要 PURPOSE: An upright type deposition apparatus is provided to improve the quality of a thin film using an atomic layer deposition method. CONSTITUTION: A shuttle part(20) is formed in the rear surface of a substrate(10). A substrate transfer unit vertically supports the substrate. A gas injection module(103) successively supplies two kinds of deposition gases to two substrates formed on both sides. A spray region(130) for supplying the deposition gases to the substrate is formed in the gas injection module. The gas injection module includes spray holes(131) for supplying the deposition gases to a vertical substrate.
申请公布号 KR101268672(B1) 申请公布日期 2013.05.29
申请号 KR20110127636 申请日期 2011.12.01
申请人 K.C.TECH CO., LTD. 发明人 JUN, YOUNG SU
分类号 H01L51/56 主分类号 H01L51/56
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