发明名称 |
GROWTH OF PLANAR AND SEMI-POLAR {1 1-2 2} GALLIUM NITRIDE WITH HYDRIDE VAPOR PHASE EPITAXY (HVPE) |
摘要 |
<p>A method of growing planar non-polar m-plane or semi-polar III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE.</p> |
申请公布号 |
EP2313543(B1) |
申请公布日期 |
2013.05.29 |
申请号 |
EP20090790542 |
申请日期 |
2009.07.16 |
申请人 |
OSTENDO TECHNOLOGIES, INC. |
发明人 |
USIKOV, ALEXANDER;SYRKIN, ALEXANDER;BROWN, ROBERT;EL-GHOROURY, HUSSEIN S.;SPIBERG, PHILIPPE;IVANTSOV, VLADIMIR;KOVALENKOV, OLEG;SHAPOVALOVA, LISA |
分类号 |
C30B29/40;C30B25/18;H01L21/02;H01L29/04;H01L29/20 |
主分类号 |
C30B29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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