发明名称 |
Method for manufacturing a reverse-conducting insulated gate bipolar transistor |
摘要 |
A reverse-conducting insulated gate bipolar transistor includes a wafer of first conductivity type with a second layer of a second conductivity type and a third layer of the first conductivity type. A fifth electrically insulating layer partially covers these layers. An electrically conductive fourth layer is electrically insulated from the wafer by the fifth layer. The third through the fifth layers form a first opening above the second layer. A sixth layer of the second conductivity type and a seventh layer of the first conductivity type are arranged alternately in a plane on a second side of the wafer. A ninth layer is formed by implantation of ions through the first opening using the fourth and fifth layers as a first mask.
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申请公布号 |
US8450777(B2) |
申请公布日期 |
2013.05.28 |
申请号 |
US20100778751 |
申请日期 |
2010.05.12 |
申请人 |
RAHIMO MUNAF;VOBECKY JAN;KOPTA ARNOST;ABB TECHNOLOGY AG |
发明人 |
RAHIMO MUNAF;VOBECKY JAN;KOPTA ARNOST |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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