| 摘要 |
PURPOSE: An amplifier circuit and a semiconductor memory device are provided to stably perform an amplification operation by reducing mismatching of an amplifying unit. CONSTITUTION: A bit line is connected to a memory cell. A sense amplifier(100) amplifies data loaded on the bit line. A sense amplifier control unit(400) supplies a pull-up voltage and a pull-down voltage to the sense amplifier in response to an amplification activation signal. A back bias voltage providing unit provides back bias voltages of different levels to the sense amplifier in an initial activation section of an amplification activation signal and after the initial activation section. [Reference numerals] (301) N pulse generation unit
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