发明名称 LIGHT EMISSION DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a light emission device that suppresses display irregularity, reduces fluctuation in transistor characteristics in different pixels, or suppresses decrease in luminance accompanying degradation of a light emission element. <P>SOLUTION: The light emission device has pixels 120 having transistors 121 provided on a substrate 100, and light emission elements 109. The transistor includes a single crystal semiconductor layer 122 where a channel forming region is formed, and has a silicon oxide layer provided between the substrate and the single crystal semiconductor layer. A source or a drain of the transistor is electrically connected to an electrode of the light emission element, and the transistor operates in a saturation region when the light emission element emits light. The grayscale display of the light emission element is carried out by changing a potential applied to the gate of the transistor. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013101353(A) 申请公布日期 2013.05.23
申请号 JP20120265980 申请日期 2012.12.05
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI
分类号 G09F9/30;H01L21/02;H01L21/336;H01L21/8234;H01L27/08;H01L27/088;H01L27/12;H01L27/32;H01L29/786;H01L51/50;H05B33/02 主分类号 G09F9/30
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