发明名称 FERROMAGNETIC TUNNEL JUNCTION ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a ferromagnetic tunnel junction element capable of current-induced magnetization reversal with a low drive current value. <P>SOLUTION: In a ferromagnetic tunnel junction element 10 having a magnetization fixed layer 100, a nonmagnetic insulating layer 110 and a magnetization free layer 120, the magnetization free layer 120 has ferromagnetic layers 220, 222 sandwiching a nonmagnetic metal layer 221, and the magnetization directions of the two ferromagnetic layers 220, 222 are in parallel with each other. Since the magnetization directions of the two ferromagnetic layers are in parallel with each other, spin transfer torque works effectively and the drive current can be reduced. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013101989(A) 申请公布日期 2013.05.23
申请号 JP20100027689 申请日期 2010.02.10
申请人 HITACHI LTD 发明人 ICHIMURA MASAHIKO;SUGANO KAZUKO;TAKAHASHI HIROMASA;HAMADA TOMOYUKI
分类号 H01L43/08;G11C11/15;H01F10/32;H01L21/8246;H01L27/105;H01L29/82;H01L43/10 主分类号 H01L43/08
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