| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for inspecting a resist pattern, achieving shorter inspection time. <P>SOLUTION: In a method for inspecting a resist pattern according to the present invention, a photoresist 12 is formed on a surface of a semiconductor substrate, a resist pattern for forming a semiconductor element is formed in the photoresist 12, and at the same time, a projecting resist pattern 16 and a recessed resist pattern 17 are formed, as a test resist pattern, in a region other than a region where the semiconductor element is formed, using a photomask having a width with an allowance of a dimension of the resist pattern. By inspecting the test resist pattern, it is determined whether or not the dimension of the resist pattern is within an allowable range. <P>COPYRIGHT: (C)2013,JPO&INPIT |
