发明名称 |
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A silicon carbide layer includes a first region having a first conductivity type, a second region provided on the first region and having a second conductivity type, and a third region provided on the second region and having the first conductivity type. A trench having an inner surface is formed in the silicon carbide layer. The trench penetrates the second and third regions. The inner surface of the trench has a first side wall and a second side wall located deeper than the first side wall and having a portion made of the second region. Inclination of the first side wall is smaller than inclination of the second side wall.
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申请公布号 |
US2013126904(A1) |
申请公布日期 |
2013.05.23 |
申请号 |
US201213658672 |
申请日期 |
2012.10.23 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OF;NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OFSCIENCE AND TECHNOLOGY;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
MASUDA TAKEYOSHI;HATAYAMA TOMOAKI |
分类号 |
H01L29/24;H01L21/28 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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