发明名称 PLASMA PROCESSING METHOD AND PLASMA PROCESSING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a cleaning method capable of reducing deposits in a plasma processing device. <P>SOLUTION: In a plasma processing device, slots arranged in a circumferential direction with respect to an axis line are formed in a slot plate of an antenna. A microwave is introduced from the antenna into a processing space via a dielectric window. A through hole is formed in the dielectric window along the axis line. A plasma processing method in this plasma processing device includes the steps of: emitting a microwave from the antenna, supplying a cleaning gas from a cleaning gas supply system, and performing a first cleaning; and (b) emitting a microwave from the antenna, supplying a cleaning gas from the cleaning gas supply system, and performing a second cleaning. A first pressure in the processing space in the first cleaning step is lower than a second pressure in the processing space in the second cleaning step. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013102048(A) 申请公布日期 2013.05.23
申请号 JP20110244679 申请日期 2011.11.08
申请人 TOKYO ELECTRON LTD 发明人 YOSHIKAWA HISASHI;MATSUMOTO NAOKI
分类号 H01L21/3065;C23C16/44;C23C16/511;H01L21/205;H01L21/31;H05H1/46 主分类号 H01L21/3065
代理机构 代理人
主权项
地址