| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a dielectric barrier with a low dielectric constant, improved etching resistivity, and excellent barrier performance. <P>SOLUTION: There is provided a method for obtaining low K dielectric barrier with superior etching resistivity, which includes the steps of: flowing a precursor to a processing chamber, the precursor comprising a mixture of organic silicon compound and hydrocarbon compound, and the hydrocarbon compound comprising ethylene, propyne, or a combination thereof; generating low density plasma of the precursor in the processing chamber so as to form a silicon carbide based dielectric barrier film on a semiconductor substrate, the film having carbon-carbon bonds; securing the presence of at least a part of the carbon-carbon bonds contained in the precursor in the low density plasma and as well as in the dielectric barrier film; and eliminating from the dielectric barrier film carbon-carbon double bonds (C=C) and/or carbon-carbon triple bonds (C≡C) by introducing a controlled amount of nitrogen. <P>COPYRIGHT: (C)2013,JPO&INPIT |
