| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film formation method preventing occurrence of cracking in a substrate. <P>SOLUTION: The thin film formation method includes a substrate preparation step for preparing a substrate, a first thin film formation step for forming a first thin film on the substrate, a crystallization step for crystallizing the first thin film by irradiating the first thin film with a light beam by relative scanning, and a relaxation layer formation step for forming a relaxation layer which reduces the amount of heat, generated from the first thin film in the crystallization step and conducted to the substrate, before the crystallization step, in a region including at least one of the end region of the substrate and the region through which a cutting line passes when cutting the substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT |
