发明名称 DATA-MASKED ANALOG AND DIGITAL READ FOR RESISTIVE MEMORIES
摘要 An analog read circuit measures the resistance of each of a plurality of bits in an array of resistive memory elements. Data stored within a latch determines whether to selectively enable the analog read circuit. In an alternate embodiment, a sense amplifier is coupled to the latch and the array, and the data stored in the latch determines whether to selectively enable the sense amplifier.
申请公布号 US2013128650(A1) 申请公布日期 2013.05.23
申请号 US201213657002 申请日期 2012.10.22
申请人 EVERSPIN TECHNOLOGIES, INC.;EVERSPIN TECHNOLOGIES, INC. 发明人 ALAM SYED M.;ANDRE THOMAS
分类号 G11C11/00 主分类号 G11C11/00
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