| 摘要 |
<p>PURPOSE: A semiconductor light emitting device is provided to improve light extraction efficiency by forming a light extraction layer with a successively decreased refractive index. CONSTITUTION: A light emitting structure(20) includes a first conductive semiconductor layer(21), an active layer(22), and a second conductive semiconductor layer(23). A light extraction layer(30) is formed on the light emitting structure. The light extraction layer includes a light transmissive thin film layer(31), a nanorod layer(32), and a nanowire layer(33). The nanorod layer includes a plurality of nanorods formed on the light transmissive thin film layer. The nanowire layer includes a plurality of nanowires formed on the nanorod layer.</p> |
