发明名称 |
SILICON CARBIDE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
Disclosed are a silicon carbide and a method for manufacturing the same. The method for manufacturing silicon carbide includes mixing a silicon source with a carbon source, and heating a mixture of the silicon and carbon sources to form the silicon carbide. At least one of the silicon source and the carbon source has an average grain size of about 10 nm to about 100 nm.
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申请公布号 |
US2013129599(A1) |
申请公布日期 |
2013.05.23 |
申请号 |
US201113813026 |
申请日期 |
2011.07.28 |
申请人 |
KIM BYUNG SOOK;HAN JUNG EUN;KIM SANG MYUNG;LG INNOTEK CO., LTD. |
发明人 |
KIM BYUNG SOOK;HAN JUNG EUN;KIM SANG MYUNG |
分类号 |
C01B31/36 |
主分类号 |
C01B31/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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