| 摘要 |
The invention relates to a method for producing a graphene sheet on a platinum silicide, wherein the platinum silicide is in the form of a layer or a plurality of pins. This method comprises: a) producing a stack by (i) depositing a layer C1 of a diffusion barrier material on a substrate; (ii) depositing, on the layer C1, a layer C2 of a carbon-containing material, wherein said carbon-containing material optionally comprises silicon; (iii) depositing, on the layer C2, a layer C3 of platinum; (iv) depositing a layer C4 of a material of formula SiaCbHc on the layer C3 if the carbon-containing material of the layer C2 is free from silicon; and b) heat-treating the stack obtained at step a). It also relates to structures obtained using this method and the uses of these structures. Applications: manufacture of micro- and nanoelectronic devices, micro- and nanoelectromechanical devices, etc.
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