发明名称 |
ULTRA HIGH VOLTAGE SIGE HBT AND MANUFACTURING METHOD THEREOF |
摘要 |
An ultra high voltage silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is disclosed, in which, a collector region is formed between two isolation structures; a pseudo buried layer is formed under each isolation structure and each side of the collector region is connected with a corresponding pseudo buried layer; a SiGe field plate is formed on each of the isolation structures; each pseudo buried layer is picked up by a first contact hole electrode and each SiGe field plate is picked up by a second contact hole electrode; and each first contact hole electrode is connected to its adjacent second contact hole electrode and the two contact hole electrodes jointly serve as an emitter. A manufacturing method of the ultra high voltage SiGe HBT is also disclosed. |
申请公布号 |
US2013126945(A1) |
申请公布日期 |
2013.05.23 |
申请号 |
US201213680506 |
申请日期 |
2012.11.19 |
申请人 |
SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.;SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD. |
发明人 |
LIU DONGHUA;SHI JING;DUAN WENTING;QIAN WENSHENG;HU JUN |
分类号 |
H01L29/737;H01L29/66 |
主分类号 |
H01L29/737 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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