发明名称 FABRICATION METHOD OF MULTI-LAYER CERAMICS CAPACITOR USING DRY PROCESS
摘要 PURPOSE: A multi-layer ceramics capacitor manufacturing method is provided to use an ALD(Atomic Layer Deposition) method in a dielectric layer, thereby improving quality. CONSTITUTION: A wafer is arranged(S1). The stacking number of a dielectric layer and an internal electrode is designated in the wafer(S2). An upper surface of the wafer is etched in a fixed pattern(S3). The internal electrode is formed on a surface of the etched wafer(S4). The dielectric layer is deposited on an upper part of the internal electrode(S5). [Reference numerals] (AA) Start; (BB) End; (S1) Prepare a wafer; (S10) Form an external electrode; (S2) Designate the stacking number; (S3) Etch the surface of the wafer; (S4) Form an internal electrode pattern; (S5) Deposit a plurality of dielectric layer by changing a deposition chamber; (S6) Repetitively laminate; (S7) Polish the rear surface of the wafer; (S8) Cut into a chip shape; (S9) Polish the edge of a chip
申请公布号 KR101266002(B1) 申请公布日期 2013.05.22
申请号 KR20120113781 申请日期 2012.10.12
申请人 KIM, HYUNG TAE;YIN JIAN;AHN, YOUNG KWAN 发明人 KIM, HYUNG TAE;AHN, YOUNG KWAN;YIN JIAN;KHO, JAE HONG
分类号 H01G4/018;H01G4/30 主分类号 H01G4/018
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