NONVOLATILE MEMORY ELEMENT AND MEMORY DEVICE INCLUDING THE SAME

摘要

PURPOSE: A nonvolatile memory element and a memory device including the same are provided to improve the reliability of a resistance change property by applying a buffer layer between a first electrode and a memory layer. CONSTITUTION: A memory element(ME1) includes a first electrode, a second electrode, and a memory layer. The memory layer is formed between the first electrode and the second electrode and includes a first material layer(10) and a second material layer(20). The memory layer has a resistance change property due to the movement of ionic species between the first material layer and the second material layer. The first metal layer is doped with a metal.