SEMICONDUCTOR CRYSTAL GROWING APPARATUS AND METHOD

摘要

PURPOSE: An apparatus and method for growing a semiconductor crystal are provided to reduce processing time by separately controlling a temperature in a raw material region and a growth region. CONSTITUTION: A metal material supplying unit(130) is arranged in a first region of a reaction tube and receives metal materials to form a semiconductor layer. A substrate mounting unit(400) is arranged in a second region of the reaction tube. An RF heater(110) is installed around the first region of the reaction tube. A furnace heater(120) is installed around the second region of the reaction tube. A plurality of gas supplying unit supply a plurality of gases to the reaction tube. A plurality of gas supplying tubes are extended from the plurality of gas supplying units to the reaction tube to supply the plurality of gases. [Reference numerals] (310) H2 or N2; (340) MO source; (AA) Exhaust