发明名称 |
Method for manufacturing semiconductor device |
摘要 |
A method for manufacturing a semiconductor device makes it possible to efficiently polish with a polishing tape a peripheral portion of a silicon substrate under polishing conditions particularly suited for a deposited film and for silicon underlying the deposited film. The method includes pressing a first polishing tape against a peripheral portion of a device substrate having a deposited film on a silicon surface while rotating the device substrate at a first rotational speed, thereby removing the deposited film lying in the peripheral portion of the device substrate and exposing the underlying silicon. A second polishing tape is pressed against the exposed silicon lying in the peripheral portion of the device substrate while rotating the device substrate at a second rotational speed, thereby polishing the silicon to a predetermined depth.
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申请公布号 |
US8445360(B2) |
申请公布日期 |
2013.05.21 |
申请号 |
US201113027551 |
申请日期 |
2011.02.15 |
申请人 |
NAKANISHI MASAYUKI;TOGAWA TETSUJI;ITO KENYA;SEKI MASAYA;IWADE KENJI;KUBOTA TAKEO;EBARA CORPORATION;KABUSHIKI KAISHA TOSHIBA |
发明人 |
NAKANISHI MASAYUKI;TOGAWA TETSUJI;ITO KENYA;SEKI MASAYA;IWADE KENJI;KUBOTA TAKEO |
分类号 |
H01L21/46;H01L21/30;H01L21/301;H01L21/78 |
主分类号 |
H01L21/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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