发明名称 |
Oxide-nitride stack gate dielectric |
摘要 |
A method of making a semiconductor structure comprises forming an oxide layer on a substrate; forming a silicon nitride layer on the oxide layer; annealing the layers in NO; and annealing the layers in ammonia. The equivalent oxide thickness of the oxide layer and the silicon nitride layer together is at most 25 Angstroms.
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申请公布号 |
US8445381(B2) |
申请公布日期 |
2013.05.21 |
申请号 |
US20070961750 |
申请日期 |
2007.12.20 |
申请人 |
RAMKUMAR KRISHNASWAMY;NARAYANAN SUNDAR;CYPRESS SEMICONDUCTOR CORPORATION |
发明人 |
RAMKUMAR KRISHNASWAMY;NARAYANAN SUNDAR |
分类号 |
H01L21/02;H01L21/28;H01L21/314;H01L29/49;H01L29/78 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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