COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To achieve a highly reliable high-voltage AlGaN/GaN HEMT which inhibits generation of current collapse in a relatively simple configuration and suppresses deterioration in device characteristics.

SOLUTION: In an AlGaN/GaN HEMT including a compound semiconductor laminate structure 2 on an SiC substrate 1, three-layered cap layer 2e is used and a high-concentration n-type part 2eA is formed near (between a gate electrode 6 and a drain electrode and adjacent to the drain electrode 5) a drain electrode 5 of the cap layer 2e. The high-concentration n-type part 2eA has a carrier concentration higher than a carrier concentration of an electron supply layer 2d and an energy level lower than that of Fermi energy.

COPYRIGHT: (C)2013,JPO&INPIT