| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor device having an electrode structure in which an interdigitated array source electrode and an interdigitated array drain electrode are arranged like crossed fingers and field concentration at tips of each interdigitated array electrode is relaxed. <P>SOLUTION: A nitride semiconductor device comprises: a gate field plate 50 electrically connected with a gate electrode 5 and arranged on an insulation film 7 between the gate electrode 5 and a drain electrode 4; and a source field plate 30 electrically connected with a source electrode 3 and arranged above between the gate field plate 50 and the drain electrode 4 so as to face a nitride semiconductor layer across an insulation film 8. At least any one of a distance between the gate electrode 5 and the drain electrode 4, a distance between a drain side end of the gate field plate 50 and a drain side end of the gate electrode, and a distance between a drain side end of the source field plate 30 and the drain side end of the gate field plate 50 is longer than linear regions of teeth parts of the source electrode 3 and the drain electrode 4. <P>COPYRIGHT: (C)2013,JPO&INPIT |
