| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element excellent in a barrier property and heat resistance and a manufacturing method thereof, and an imaging element and a manufacturing method thereof. <P>SOLUTION: There is provided a manufacturing method of a photoelectric conversion element having a substrate, a lower electrode formed on the substrate, an organic layer which is formed on the lower electrode and generates an electric charge when irradiated with light, an upper electrode which is formed on the organic layer and transparent to visible light, and an element protection layer formed on the upper electrode. In this method, a step of forming the element protection layer further includes the steps of: generating a plasma by supplying an inactive carrier gas to the organic layer; and forming a silicon-containing protection film by further supplying a reactive process gas including a SiH<SB POS="POST">4</SB>gas, a combustion supporting gas, and an ammonia gas in a state in which the carrier gas was supplied to generate the plasma. <P>COPYRIGHT: (C)2013,JPO&INPIT |
