| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique that achieves normally-off and low on-resistance in a nitride semiconductor device having a plurality of channels. <P>SOLUTION: A semiconductor device includes: a nitride semiconductor stack 10 having at least two heterozygotes in which first nitride semiconductor layers 3, 5, and 7 and second nitride semiconductor layers 4, 6, and 8 having a larger forbidden band width than the first nitride semiconductor layers are stacked; a drain electrode 14 and a source electrode 13 provided on the nitride semiconductor stack 10; and gate electrodes provided facing both the drain electrode 14 and the source electrode 13. The drain electrode 14 and the source electrode 13 are disposed on a surface or side surfaces of the nitride semiconductor stack 10. The gate electrodes have a first gate electrode 15 provided in the depth direction of the nitride semiconductor stack 10 and a second gate electrode 16 having a different depth in the depth direction of the nitride semiconductor stack 10 from the first gate electrode 15. <P>COPYRIGHT: (C)2013,JPO&INPIT |
