发明名称 MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a memory device and a semiconductor device with low manufacturing cost, and to provide a method of manufacturing the semiconductor device. <P>SOLUTION: There is provided a method of manufacturing a semiconductor device including a first chip mounted on a substrate and connected to the substrate by a bonding wire and a second chip mounted on the substrate so as to be stacked on the first chip and larger than the first chip. An insulating layer is applied to a portion on an adhesive surface of the second chip to the first chip corresponding to a portion in which the bonding wire is formed, an adhesive layer is formed on the adhesive surface of the second chip, and then the substrate and the second chip are bonded. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013098240(A) 申请公布日期 2013.05.20
申请号 JP20110237515 申请日期 2011.10.28
申请人 TOSHIBA CORP 发明人 TANE YASUO;IMOTO TAKASHI;KAWATO MASATOSHI;MIYASHITA KOICHI;ANDO YOSHIYASU;TANIMOTO AKIRA
分类号 H01L25/065;H01L25/07;H01L25/18 主分类号 H01L25/065
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