METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To form a through electrode inside a through hole by metal plating even if the through hole included in a semiconductor device is miniaturized.

SOLUTION: A method of manufacturing a semiconductor device 100 includes: a seed layer formation step of forming a seed layer 30 on a first surface 10a side of a substrate 10; a wiring layer formation step of forming a wiring layer 40 on the seed layer 30 after the seed layer formation step; a through hole formation step of forming a through hole 10c reaching the seed layer 30 from a second surface 10b of the substrate 10 after the wiring layer formation step; a through electrode formation step of forming a through electrode 60 inside the through hole 10c by metal plating after the through hole formation step; and a dividing step of dividing the seed layer 30 into a plurality of parts after the through electrode formation step.

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