发明名称 ETCHANT PRETREATMENT METHOD, SILICON SUBSTRATE ETCHING METHOD, AND SILICON SUBSTRATE ETCHING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To obtain an etchant processing method, a silicon substrate etching method, and a silicon substrate etching device that make it possible to perform texture formation on a surface of a silicon substrate with stability and high productivity. <P>SOLUTION: An etchant pretreatment method that is carried out on an etchant, which is supplied to a surface of a silicon substrate to thereby form unevenness on the silicon substrate surface through wet etching, before the etchant is supplied to the silicon substrate surface, comprises: carrying out bubbling processing on the etchant containing at least one kind of organic additive for impeding etching reaction on the silicon substrate surface, water, and an alkaline reagent to thereby separate a hydrophobic impurity in the etchant to a liquid surface of the etchant. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013098256(A) 申请公布日期 2013.05.20
申请号 JP20110237861 申请日期 2011.10.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 NISHIYAMA AYA;YOSHIDA YASUHIRO;YASUNAGA NOZOMI;SHIRAYANAGI YUSUKE
分类号 H01L21/306;H01L31/04 主分类号 H01L21/306
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