ELECTRODE STRUCTURE, GALLIUM NITRIDE-BASED SEMICONDUCTOR ELEMENT PROVIDED WITH THE SAME, AND METHOD FOR MANUFACTURING THEM

摘要

PROBLEM TO BE SOLVED: To provide an electrode structure, a gallium nitride-based semiconductor element provided with the same, and a method for manufacturing them.

SOLUTION: The gallium nitride-based semiconductor element includes a GaN-based semiconductor layer GL10, and electrode structures 500A and 500B provided on the GaN-based semiconductor layer. The electrode structures 500A and 500B include electrode elements 50A and 50B containing conductive substances, and diffusion layers 5A and 5B provided between the electrode elements 50A and 50B and a GaN-based semiconductor layer 200. The diffusion layers 5A and 5B contain an n-type dopant, the n-type dopant contains a group-IV element, and a region of the GaN-based semiconductor layer 200 in contact with the diffusion layers is doped with the n-type dopant (for instance, group-IV element).

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