发明名称 |
PROCESS TO REMOVE Ni AND Pt RESIDUES FOR NiPtSi APPLICATIONS |
摘要 |
The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Embodiments of the invention provide a multi-step cleaning process, comprising exposing the substrate to a nitric acid solution after a first anneal, followed by an aqua regia solution after a second anneal. The substrate can be optionally exposed to a hydrochloric acid solution afterward to completely remove any remaining platinum residues.
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申请公布号 |
US2013122671(A1) |
申请公布日期 |
2013.05.16 |
申请号 |
US201113296444 |
申请日期 |
2011.11.15 |
申请人 |
DUONG ANH;BARSTOW SEAN;FITZ CLEMENS;FOSTER JOHN;KARLSSON OLOV;LI BEI;MAVRINAC JAMES;GLOBALFOUNDRIES;INTERMOLECULAR, INC. |
发明人 |
DUONG ANH;BARSTOW SEAN;FITZ CLEMENS;FOSTER JOHN;KARLSSON OLOV;LI BEI;MAVRINAC JAMES |
分类号 |
H01L21/336;H01L21/28 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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