| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method capable of forming an ohmic electrode having low contact resistance by low-temperature heating treatment. <P>SOLUTION: The method for manufacturing the nitride semiconductor device includes: stacking low melting point metal 7 such as indium or germanium on an ohmic electrode forming region of a nitride semiconductor layer; subjecting the nitride semiconductor layer to a heating treatment at a low temperature in the vicinity of the melting point of the low melting point metal; thereby diffusing the low melting point metal into the nitride semiconductor layer; and forming an alloy layer 8 to form an ohmic contact. The method includes: removing the indium or germanium remaining on the surface of the nitride semiconductor layer; and then forming a metal layer 9 for wiring. <P>COPYRIGHT: (C)2013,JPO&INPIT |
