| 摘要 |
A driving circuit is provided. The driving circuit is capable of driving a load coupled to an output node of the driving circuit. The driving circuit includes an output-stage element, a first N-type metal-oxide-semiconductor (NMOS) transistor, and a first P-type metal-oxide-semiconductor (PMOS) transistor. The output-stage element is coupled between an operation voltage source and the output node. The first NMOS transistor has a gate, a drain coupled to the output node, and a source coupled to a ground. The first PMOS transistor has a gate, a drain coupled to the ground, and a source coupled to the output node. When the first NMOS transistor begins to be turned off, the first PMOS transistor is turned on, and a voltage at the drain of the first NMOS transistor is clamped to be lower than a breakdown trigger voltage of the first NMOS transistor.
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