| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce a write current. <P>SOLUTION: A magnetic storage element 10 comprises: a storage layer 12 having magnetic anisotropy in a vertical direction to a film surface and having a variable magnetization direction; a non-magnetic layer 13 provided on the storage layer 12; and a reference layer 14 provided on the non-magnetic layer 13 and having magnetic anisotropy in a vertical direction to the film surface and having an invariable magnetization direction. An area of the storage layer 12 is larger than an area of the reference layer 14. Magnetization at an end of the storage layer 12 is smaller than magnetization at a central part of the storage layer 12. <P>COPYRIGHT: (C)2013,JPO&INPIT |
